RF BJT NPN transistor designed for high-frequency applications, operating up to 65 GHz. Features a 2.3V collector-emitter voltage, 80mA continuous collector current, and 185mW power dissipation. Offers a noise figure of 0.7dB and power gain of 21.5dB. Packaged in a 4-pin SOT-343 surface-mount configuration, this lead-free and halogen-free component is supplied on tape and reel.
Frequency65GHz
PackageSOT
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Infineon BFP620H7764XTSA1 technical specifications.
General
| Package/Case | SOT |
| Collector Base Voltage (VCBO) | 7.5V |
| Collector Emitter Breakdown Voltage | 2.8V |
| Collector Emitter Voltage (VCEO) | 2.3V |
| Collector-emitter Voltage-Max | 2.3V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 80mA |
| Emitter Base Voltage (VEBO) | 1.2V |
| Frequency | 65GHz |
| Gain | 21.5dB |
| Halogen Free | Halogen Free |
| hFE Min | 110 |
| Hold Current | 100mA |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 2.8V |
| Max Collector Current | 80mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 185mW |
| Max Repetitive Reverse Voltage (Vrrm) | 15V |
| Mount | Surface Mount |
| Noise Figure | 0.7dB |
| Number of Elements | 1 |
| Operating Frequency | 65 GHz |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 185mW |
| Power Gain | 21.5dB |
| RoHS Compliant | Yes |
| Transition Frequency | 65GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP620H7764XTSA1 Datasheet
Download the complete datasheet for Infineon BFP620H7764XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
