RF BJT NPN transistor designed for high-frequency applications, operating up to 65 GHz. Features a 2.3V collector-emitter voltage, 80mA continuous collector current, and 185mW power dissipation. Offers a noise figure of 0.7dB and power gain of 21.5dB. Packaged in a 4-pin SOT-343 surface-mount configuration, this lead-free and halogen-free component is supplied on tape and reel.
Frequency65GHz
PackageSOT
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFP620H7764XTSA1 technical specifications.
General
Package/Case
SOT
Collector Base Voltage (VCBO)
7.5V
Collector Emitter Breakdown Voltage
2.8V
Collector Emitter Voltage (VCEO)
2.3V
Collector-emitter Voltage-Max
2.3V
Contact Plating
Tin, Matte
Continuous Collector Current
80mA
Emitter Base Voltage (VEBO)
1.2V
Frequency
65GHz
Gain
21.5dB
Halogen Free
Halogen Free
hFE Min
110
Hold Current
100mA
Lead Free
Lead Free
Max Breakdown Voltage
2.8V
Max Collector Current
80mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
185mW
Max Repetitive Reverse Voltage (Vrrm)
15V
Mount
Surface Mount
Noise Figure
0.7dB
Number of Elements
1
Operating Frequency
65 GHz
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
185mW
Power Gain
21.5dB
RoHS Compliant
Yes
Transition Frequency
65GHz
Compliance
RoHS
Compliant
Datasheet
Infineon BFP620H7764XTSA1 Datasheet
Download the complete datasheet for Infineon BFP620H7764XTSA1 to view detailed technical specifications.
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