
RF BJT NPN transistor designed for high-frequency applications, operating up to 65 GHz. Features a 2.3V collector-emitter voltage, 80mA continuous collector current, and 185mW power dissipation. Offers a noise figure of 0.7dB and power gain of 21.5dB. Packaged in a 4-pin SOT-343 surface-mount configuration, this lead-free and halogen-free component is supplied on tape and reel.
Infineon BFP620H7764XTSA1 technical specifications.
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