NPN bipolar junction transistor for RF applications, operating up to 40GHz with a 40GHz transition frequency. Features a maximum collector-emitter voltage of 4V and a continuous collector current of 50mA, with a gain of 23dB. Housed in a compact 1.4mm x 0.8mm x 0.55mm SMD/SMT package, this lead-free, RoHS-compliant component is surface mountable and rated for operation between -65°C and 150°C. Maximum power dissipation is 200mW.
Frequency40000 MHz
PackageSMD/SMT
Current Rating50mA
MountingSurface Mount
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Technical Specifications
Infineon BFP640FE6327 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Breakdown Voltage | 4.5V |
| Collector-emitter Voltage-Max | 4V |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 1.2V |
| Gain | 23dB |
| Height | 0.55mm |
| Lead Free | Lead Free |
| Length | 1.4mm |
| Max Breakdown Voltage | 4.5V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Frequency | 40000 MHz |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 40GHz |
| DC Rated Voltage | 4V |
| Width | 0.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP640FE6327 Datasheet
Download the complete datasheet for Infineon BFP640FE6327 to view detailed technical specifications.
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