
The BFP640FE6327XT is a single NPN transistor with a collector base voltage rating of 13V and a collector emitter voltage rating of 4V. It can handle a maximum current of 50mA and operates at frequencies up to 40GHz. This lead-free device is suitable for surface mount applications and can withstand temperatures between -65°C and 150°C. The transistor has a power dissipation rating of 200mW and is rated for a DC voltage of 4V.
Infineon BFP640FE6327XT technical specifications.
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Voltage (VCEO) | 4V |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 1.2V |
| Frequency | 40GHz |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| DC Rated Voltage | 4V |
| RoHS | Not Compliant |
Download the complete datasheet for Infineon BFP640FE6327XT to view detailed technical specifications.
No datasheet is available for this part.
