The BFP640FESDH6327XTSA1 is a NPN RF transistor with a collector base voltage of 4.8V and collector emitter breakdown voltage of 4.7V. It can handle a maximum collector current of 50mA and a maximum power dissipation of 200mW. The transistor is packaged in a halogen-free and RoHS compliant TSFP-4-1 package and is suitable for surface mount applications. It operates within a temperature range of -55°C to 150°C and is compliant with Reach SVHC and RoHS regulations.
PackageSMD/SMT
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFP640FESDH6327XTSA1 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 4.8V |
| Collector Emitter Breakdown Voltage | 4.7V |
| Contact Plating | Tin |
| Continuous Collector Current | 50mA |
| Emitter Base Voltage (VEBO) | 4.8V |
| Gain | 30.5dB |
| Max Breakdown Voltage | 4.7V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 46GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP640FESDH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFP640FESDH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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