High-frequency NPN RF bipolar junction transistor designed for surface mount applications. Features a 40GHz transition frequency and 24dB power gain, with a low noise figure of 0.65dB. Operates with a collector-emitter voltage of 4V and a maximum collector current of 50mA, supporting a maximum power dissipation of 200mW. Packaged in a 4-pin SOT-343 (3+Tab) for tape and reel distribution, this component is RoHS and Halogen Free, suitable for automotive environments with an operating temperature range of -65°C to 150°C.
Frequency40GHz
PackageSOT
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFP640H6327XTSA1 technical specifications.
General
| Package/Case | SOT |
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Breakdown Voltage | 4.5V |
| Collector Emitter Voltage (VCEO) | 4V |
| Emitter Base Voltage (VEBO) | 1.2V |
| Frequency | 40GHz |
| Gain | 12.5dB |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 4.5V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 0.65dB |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Power Gain | 24dB |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP640H6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFP640H6327XTSA1 to view detailed technical specifications.
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