This RF transistor features a maximum collector current of 150mA and a maximum power dissipation of 500mW. It operates within a temperature range of -65°C to 150°C and is packaged in a surface mount configuration. The device is lead free and halogen free, and is compliant with RoHS regulations.
PackageSMD/SMT
MountingSurface Mount
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Technical Specifications
Infineon BFP650FH6327XTSA1 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Breakdown Voltage | 4.5V |
| Collector Emitter Voltage (VCEO) | 4V |
| Contact Plating | Tin, Matte |
| Gain | 21.5dB |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 4.5V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Noise Figure | 0.8dB |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Power Gain | 21.5dB |
| RoHS Compliant | Yes |
| Transition Frequency | 42GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP650FH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFP650FH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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