
The BFP720FH6327XTSA1 is a high-frequency RF transistor from Infineon, featuring a transition frequency of 45GHz and a maximum collector current of 25mA. It is designed for surface mount applications and is packaged in a halogen-free and RoHS compliant TSFP-4-1 package. The transistor operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 100mW. It is suitable for use in high-frequency applications where a high gain of 28dB is required.
Infineon BFP720FH6327XTSA1 technical specifications.
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Breakdown Voltage | 4.7V |
| Contact Plating | Tin, Matte |
| Gain | 28dB |
| Max Breakdown Voltage | 4.7V |
| Max Collector Current | 25mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| Transition Frequency | 45GHz |
| RoHS | Compliant |
Download the complete datasheet for Infineon BFP720FH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
