NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a 42 GHz transition frequency and operating up to 42 GHz. This surface-mount device offers a maximum collector-emitter voltage of 4V and a continuous collector current of 30mA. With a maximum power dissipation of 160mW and a gain of 27.5dB, it operates within a temperature range of -65°C to 150°C. The component is housed in a compact 4-lead TSFP package, measuring 1.4mm x 0.8mm x 0.55mm, and is supplied on tape and reel.
Frequency42 GHz
PackageSMD/SMT
Current Rating30mA
MountingSurface Mount
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Technical Specifications
Infineon BFP740FE6327 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Breakdown Voltage | 4.7V |
| Collector-emitter Voltage-Max | 4V |
| Continuous Collector Current | 30mA |
| Current Rating | 30mA |
| Emitter Base Voltage (VEBO) | 1.2V |
| Gain | 27.5dB |
| Height | 0.55mm |
| Lead Free | Lead Free |
| Length | 1.4mm |
| Max Breakdown Voltage | 4.7V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 160mW |
| Mount | Surface Mount |
| Operating Frequency | 42 GHz |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Transition Frequency | 42GHz |
| DC Rated Voltage | 4V |
| Width | 0.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP740FE6327 Datasheet
Download the complete datasheet for Infineon BFP740FE6327 to view detailed technical specifications.
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