The BFP740FESDH6327XTSA1 is a high-frequency RF transistor with a maximum collector current of 45mA and a maximum operating temperature of 150°C. It features a gain of 31dB and a transition frequency of 47GHz. The device is packaged in a halogen-free and RoHS compliant TSFP-4 package, suitable for surface mount applications. The transistor is rated for operation over a temperature range of -55°C to 150°C.
Infineon BFP740FESDH6327XTSA1 technical specifications.
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 4.9V |
| Collector Emitter Breakdown Voltage | 4.7V |
| Contact Plating | Tin |
| Emitter Base Voltage (VEBO) | 500mV |
| Gain | 31dB |
| Height | 0.55mm |
| Length | 1.4mm |
| Max Breakdown Voltage | 4.7V |
| Max Collector Current | 45mA |
| Max Frequency | 47GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| Transition Frequency | 47GHz |
| Width | 0.8mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BFP740FESDH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.