The BFP740FH6327XTSA1 is a surface mount NPN RF transistor with a maximum collector current of 30mA and a maximum operating temperature of 150°C. It has a maximum power dissipation of 160mW and is compliant with RoHS and Reach SVHC regulations. The transistor has a transition frequency of 42GHz and a gain of 27.5dB. It is packaged in a TSFP-3 package and is halogen free and lead free. The transistor has a collector base voltage of 13V and an emitter base voltage of 1.2V.
Frequency42GHz
PackageSMD/SMT
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFP740FH6327XTSA1 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Breakdown Voltage | 4.7V |
| Collector Emitter Voltage (VCEO) | 4V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 1.2V |
| Frequency | 42GHz |
| Gain | 27.5dB |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 4.7V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 160mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 160mW |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 42GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP740FH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFP740FH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.