High-performance NPN RF bipolar junction transistor designed for demanding applications. Features a maximum operating temperature of 150°C and a minimum of -65°C, ensuring reliable operation across a wide temperature range. This single-element transistor is housed in a 4-pin SOT-89 (TO-243) package, offering a robust solution for RF amplification and switching. Delivers 15V breakdown voltage and handles up to 0.12A with a power dissipation capability of 1000mW.
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Technical Specifications
Infineon BFQ19SH6327XTSA1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -65 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-243 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon BFQ19SH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFQ19SH6327XTSA1 to view detailed technical specifications.
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