NPN RF BJT transistor for surface mount applications, featuring a 5GHz transition frequency and 13dB power gain. This component offers a maximum collector current of 210mA and a maximum power dissipation of 700mW. Operating across a temperature range of -55°C to 150°C, it boasts a collector-emitter breakdown voltage of 15V and a noise figure of 1.8dB. Packaged in a 3-pin SOT-23, it is RoHS compliant with tin, matte contact plating.
Frequency5GHz
PackageSOT
Current Rating210mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon BFR106E6327HTSA1 technical specifications.
General
Package/Case
SOT
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
15V
Collector Emitter Voltage (VCEO)
15V
Contact Plating
Tin, Matte
Current Rating
210mA
Emitter Base Voltage (VEBO)
3V
Frequency
5GHz
Gain
13dB
Halogen Free
Not Halogen Free
Height
1mm
hFE Min
70
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
15V
Max Collector Current
210mA
Max Frequency
5GHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Surface Mount
Noise Figure
1.8dB
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
700mW
Power Gain
13dB
RoHS Compliant
Yes
Transition Frequency
5GHz
DC Rated Voltage
15V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Infineon BFR106E6327HTSA1 Datasheet
Download the complete datasheet for Infineon BFR106E6327HTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
