NPN bipolar junction transistor (BJT) for RF applications, featuring a maximum frequency of 8GHz and a gain of 19dB. This surface mount component operates with a collector-emitter voltage of 12V, a continuous collector current of 35mA, and a DC rated voltage of 40V. Housed in a SOT-323-3 package, it offers a minimum hFE of 70 and a power dissipation of 250mW, with an operating temperature range of -65°C to 150°C.
Frequency8GHz
PackageSOT-323-3
Current Rating120mA
MountingSurface Mount
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Technical Specifications
Infineon BFR182WE6327 technical specifications.
General
| Package/Case | SOT-323-3 |
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 35mA |
| Current Rating | 120mA |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 8GHz |
| Gain | 19dB |
| Gain Bandwidth Product | 8GHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 35mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Transition Frequency | 8GHz |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFR182WE6327 Datasheet
Download the complete datasheet for Infineon BFR182WE6327 to view detailed technical specifications.
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