NPN RF Bipolar Junction Transistor designed for high-frequency applications, featuring a 14GHz transition frequency and 15.5dB gain. This surface-mount component operates with a maximum collector current of 35mA and a collector-emitter voltage of 6V, with a maximum power dissipation of 210mW. It is housed in a compact 3-pin TSFP package (SOT-723) and offers a wide operating temperature range from -55°C to 150°C. The transistor is RoHS compliant, lead-free, and halogen-free, with tin-matte contact plating.
Frequency14GHz
PackageSOT-723
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFR360FH6327XTSA1 technical specifications.
General
| Package/Case | SOT-723 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 9V |
| Collector Emitter Voltage (VCEO) | 6V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 14GHz |
| Gain | 15.5dB |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 9V |
| Max Collector Current | 35mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 210mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 210mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 14GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFR360FH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFR360FH6327XTSA1 to view detailed technical specifications.
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