Infineon
BFR460L3E6327XTMA1
15V 50mA NPN RF Transistor, 5.8V Breakdown, 200mW, Lead Free, Halogen Free
The BFR460L3E6327XTMA1 is a 15V NPN RF transistor with a collector emitter breakdown voltage of 5.8V and a maximum collector current of 50mA. It has a maximum power dissipation of 200mW and is designed for surface mount applications. The device is lead free and halogen free, and is compliant with RoHS regulations. The transistor operates over a temperature range of -55°C to 150°C.
MountingSurface Mount
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Technical Specifications
Infineon BFR460L3E6327XTMA1 technical specifications.
General
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 5.8V |
| Collector Emitter Voltage (VCEO) | 4.5V |
| Contact Plating | Gold |
| Gain | 16dB |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 5.8V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| RoHS Compliant | Yes |
| Transition Frequency | 22GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFR460L3E6327XTMA1 Datasheet
Download the complete datasheet for Infineon BFR460L3E6327XTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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