X-band RF small signal bipolar transistor, NPN polarity, featuring a 75 GHz operating frequency and transition frequency. This silicon germanium device offers a 0.5 dB noise figure and 27 dB gain, with a continuous collector current of 35mA. Designed for surface mount applications, it operates from -55°C to 150°C and is halogen-free and RoHS compliant.
Frequency75 GHz
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFR840L3RHESDE6327XTSA1 technical specifications.
General
| Collector Base Voltage (VCBO) | 2.9V |
| Collector Emitter Breakdown Voltage | 2.6V |
| Collector Emitter Voltage (VCEO) | 2.25V |
| Collector-emitter Voltage-Max | 2.25V |
| Contact Plating | Gold |
| Continuous Collector Current | 35mA |
| Emitter Base Voltage (VEBO) | 2.9V |
| Gain | 27dB |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 2.6V |
| Max Collector Current | 35mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75mW |
| Mount | Surface Mount |
| Noise Figure | 0.5dB |
| Operating Frequency | 75 GHz |
| Package Quantity | 15000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Gain | 26.5dB |
| RoHS Compliant | Yes |
| Transition Frequency | 75GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFR840L3RHESDE6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFR840L3RHESDE6327XTSA1 to view detailed technical specifications.
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