The BFR92WH6327 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 15V and a continuous collector current of 45mA. It operates over a temperature range of -65°C to 150°C and has a maximum power dissipation of 280mW. The transistor is packaged in a SOT-323-3 case and is available in tape and reel quantities of 3000.
Frequency2GHz
PackageSOT-323-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFR92WH6327 technical specifications.
General
| Package/Case | SOT-323-3 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector-emitter Voltage-Max | 15V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 45mA |
| Emitter Base Voltage (VEBO) | 2.5V |
| Frequency | 2GHz |
| Gain | 17dB |
| hFE Min | 70 |
| Max Collector Current | 45mA |
| Max Frequency | 2GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 280mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 280mW |
| Series | BFR92 |
| Transition Frequency | 5GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFR92WH6327 Datasheet
Download the complete datasheet for Infineon BFR92WH6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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