NPN RF small signal bipolar transistor for L-band applications. Features a 12V collector-emitter breakdown voltage and a maximum collector current of 90mA. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 300mW. This surface-mount device, housed in a SOT package, offers a transition frequency of 6GHz and a gain of 15.5dB. It is RoHS compliant, lead-free, and halogen-free with tin, matte contact plating.
PackageSOT
MountingSurface Mount
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Technical Specifications
Infineon BFR93AWH6327XTSA1 technical specifications.
General
| Package/Case | SOT |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Contact Plating | Tin, Matte |
| Gain | 15.5dB |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 90mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| RoHS Compliant | Yes |
| Transition Frequency | 6GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFR93AWH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFR93AWH6327XTSA1 to view detailed technical specifications.
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