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Technical Specifications
Infineon BFR949L3E6327 technical specifications.
General
| Collector Emitter Breakdown Voltage | 10V |
| Collector-emitter Voltage-Max | 10V |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 9GHz |
| Gain | 21.5dB |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 50mA |
| Max Frequency | 9GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 15000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Transition Frequency | 9GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFR949L3E6327 Datasheet
Download the complete datasheet for Infineon BFR949L3E6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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