The BFR949TE6327 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA. It has a maximum power dissipation of 250mW and is lead free. The device is available in a tape and reel packaging with a quantity of 3000 units. The transistor has a gain of 20dB and a transition frequency of 9GHz. It is suitable for use in a variety of applications where a high-speed, low-power transistor is required.
Current Rating35mA
MountingSurface Mount
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Technical Specifications
Infineon BFR949TE6327 technical specifications.
General
| Collector Emitter Breakdown Voltage | 10V |
| Current Rating | 35mA |
| Gain | 20dB |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 35mA |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Transition Frequency | 9GHz |
| DC Rated Voltage | 10V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFR949TE6327 Datasheet
Download the complete datasheet for Infineon BFR949TE6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.