Infineon
BFS386L6E6327
NPN Bipolar Junction Transistor, 6V Collector Emitter Breakdown Voltage, 380mW Max Power Dissipation
The BFS386L6E6327 is a surface mount NPN bipolar junction transistor with a collector emitter breakdown voltage of 6V and a maximum power dissipation of 380mW. It has a gain of 14.5dB and a maximum collector current of 80mA. This transistor is available in tape and reel packaging with 15000 units per package. It operates up to a transition frequency of 14GHz.
MountingSurface Mount
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Technical Specifications
Infineon BFS386L6E6327 technical specifications.
General
| Collector Emitter Breakdown Voltage | 6V |
| Gain | 14.5dB |
| Max Breakdown Voltage | 6V |
| Max Collector Current | 80mA |
| Max Power Dissipation | 380mW |
| Mount | Surface Mount |
| Package Quantity | 15000 |
| Packaging | Tape and Reel |
| Transition Frequency | 14GHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFS386L6E6327 Datasheet
Download the complete datasheet for Infineon BFS386L6E6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.