RF BJT NPN transistor featuring a 12V collector-emitter breakdown voltage and 65mA maximum collector current. This surface mount component operates up to 8GHz with a gain of 19dB, housed in a compact 6-pin SOT-363 package. Designed for automotive applications, it offers a wide operating temperature range from -65°C to 150°C and a maximum power dissipation of 450mW. The component is RoHS and REACH SVHC compliant, supplied in tape and reel packaging.
Frequency8GHz
PackageSOT-363-6
MountingSurface Mount
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Technical Specifications
Infineon BFS483H6327XTSA1 technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 2V |
| Gain | 19dB |
| Height | 0.8mm |
| Length | 2mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 65mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 450mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFS483H6327XTSA1 Datasheet
Download the complete datasheet for Infineon BFS483H6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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