Infineon
BG3123H6327XTSA1
RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-363, 6 PIN
Frequency800MHz
PackageSOT-363-6
Voltage Rating8V
MountingSurface Mount
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Technical Specifications
Infineon BG3123H6327XTSA1 technical specifications.
General
Package/Case
SOT-363-6
Continuous Drain Current (ID)
25mA
Frequency
800MHz
Gain
25dB
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Noise Figure
1.8dB
Number of Elements
2
Packaging
Tape and Reel
RoHS Compliant
No
Test Voltage
5V
Voltage Rating
8V
Compliance
RoHS
Not Compliant
Datasheet
Infineon BG3123H6327XTSA1 Datasheet
Download the complete datasheet for Infineon BG3123H6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.