The BG3123H6327XTSA1 is a dual RF transistor from Infineon, packaged in a SOT-363-6 surface mount package. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 200mW. The transistor has a gain of 25dB and a frequency of 800MHz. It is available in tape and reel packaging and is not RoHS compliant.
Frequency800MHz
PackageSOT-363-6
Voltage Rating8V
MountingSurface Mount
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Technical Specifications
Infineon BG3123H6327XTSA1 technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 25mA |
| Frequency | 800MHz |
| Gain | 25dB |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 1.8dB |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| RoHS Compliant | No |
| Test Voltage | 5V |
| Voltage Rating | 8V |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon BG3123H6327XTSA1 Datasheet
Download the complete datasheet for Infineon BG3123H6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.