BG3130RH6327XTSA1

Ultra High Frequency RF Small Signal Field-Effect Transistor for demanding applications. Features N-Channel Silicon Metal-oxide Semiconductor FET technology with a 2-element configuration. Operates up to 800MHz with a gain of 24dB and a low noise figure of 1.3dB. Designed for surface mount with a SOT package, offering 12V drain-to-source breakdown voltage and 25mA continuous drain current. RoHS compliant and halogen-free for environmental considerations.