Ultra High Frequency RF Small Signal Field-Effect Transistor for demanding applications. Features N-Channel Silicon Metal-oxide Semiconductor FET technology with a 2-element configuration. Operates up to 800MHz with a gain of 24dB and a low noise figure of 1.3dB. Designed for surface mount with a SOT package, offering 12V drain-to-source breakdown voltage and 25mA continuous drain current. RoHS compliant and halogen-free for environmental considerations.
Frequency800MHz
PackageSOT
Voltage Rating8V
Current Rating25mA
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Technical Specifications
Infineon BG3130RH6327XTSA1 technical specifications.
General
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 25mA |
| Current Rating | 25mA |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Voltage (Vdss) | 12V |
| Frequency | 800MHz |
| Gain | 24dB |
| Gate to Source Voltage (Vgs) | 6V |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| Input Capacitance | 1.9pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 1.3dB |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Test Voltage | 5V |
| Voltage Rating | 8V |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BG3130RH6327XTSA1 Datasheet
Download the complete datasheet for Infineon BG3130RH6327XTSA1 to view detailed technical specifications.
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