N-channel Power MOSFET, 30V drain-source voltage, 32A continuous drain current. Features OptiMOS process technology, single quad drain dual source configuration, and 1.7 mOhm maximum drain-source resistance at 10V. Housed in a 7-pin WDSON lead-frame SMT package with dimensions of 5.5mm x 4.93mm x 0.52mm. Operating temperature range from -40°C to 150°C.
PackageWDSON
MountingSurface Mount
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Technical Specifications
Infineon BSB017N03LX3 G technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SON |
| Package/Case | WDSON |
| Lead Shape | No Lead |
| Pin Count | 7 |
| PCB | 7 |
| Package Length (mm) | 5.5 |
| Package Width (mm) | 4.93 |
| Package Height (mm) | 0.52 |
| Seated Plane Height (mm) | 0.65 |
| Package Material | Copper |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Dual Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 32A |
| Maximum Drain Source Resistance | 1.7@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|77@10VnC |
| Typical Gate Charge @ 10V | 77nC |
| Typical Input Capacitance @ Vds | 5900@15VpF |
| Maximum Power Dissipation | 2800mW |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BSB017N03LX3 G Datasheet
Download the complete datasheet for Infineon BSB017N03LX3 G to view detailed technical specifications.
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