N-channel MOSFET featuring 60V drain-source voltage and 22A continuous drain current. This silicon power transistor offers a low on-resistance of 0.0028 ohms. Designed with a single element and three terminals, it operates up to a maximum temperature of 150°C. The device utilizes a metal-oxide semiconductor field-effect transistor construction.
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Technical Specifications
Infineon BSB028N06NN3GXUMA1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon BSB028N06NN3GXUMA1 Datasheet
Download the complete datasheet for Infineon BSB028N06NN3GXUMA1 to view detailed technical specifications.
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