N-Channel Power MOSFET, 30V Vds, 37A continuous drain current, and 1.1mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a 1-element configuration, surface mount TDSON-8 package, and Tin contact plating. With a maximum power dissipation of 96W and operating temperature range of -55°C to 150°C, it offers fast switching characteristics with a 6.2ns fall time and 6.7ns turn-on delay. This RoHS compliant component is designed for efficient power management applications.
MountingSurface Mount
Power2.5W
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Technical Specifications
Infineon BSC011N03LSATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 37A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 96W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 6.7ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC011N03LSATMA1 Datasheet
Download the complete datasheet for Infineon BSC011N03LSATMA1 to view detailed technical specifications.
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