N-Channel Power MOSFET, 30V Vds, 1.1mΩ Rds(on), and 100A continuous drain current. Features a low on-resistance and fast switching speeds with a 6.2ns fall time and 37ns turn-off delay. Designed for surface mount applications with a TDSON-8 package, offering 96W power dissipation and operating from -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power96W
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Technical Specifications
Infineon BSC011N03LSIATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.3nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 96W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 96W |
| Rds On Max | 1.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 37ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC011N03LSIATMA1 Datasheet
Download the complete datasheet for Infineon BSC011N03LSIATMA1 to view detailed technical specifications.
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