N-channel silicon power MOSFET featuring a low on-resistance of 0.0022 ohms and a continuous drain current capability of 33A at 25V. This single-element Metal-oxide Semiconductor Field-Effect Transistor is housed in a compact SOP-8 package, offering dual terminal positions and a total of five terminals for versatile integration.
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Technical Specifications
Infineon BSC015NE2LS5IATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSC015NE2LS5IATMA1 Datasheet
Download the complete datasheet for Infineon BSC015NE2LS5IATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.