N-Channel Power MOSFET, 30V Drain-to-Source Voltage (Vdss), 25A Continuous Drain Current (ID), and a low 2.5mΩ Rds On resistance. Features include 6.1nF input capacitance, 10ns turn-on delay, and 6ns fall time. This surface-mount device operates from -55°C to 150°C with a maximum power dissipation of 83W. It is RoHS compliant and utilizes Tin, Matte contact plating.
MountingSurface Mount
Power2.5W
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Technical Specifications
Infineon BSC025N03LSGATMA1 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 6.1nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 2.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC025N03LSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC025N03LSGATMA1 to view detailed technical specifications.
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