N-channel Power MOSFET, OptiMOS process technology, featuring a 30V drain-source voltage and 24A continuous drain current. This single-element transistor is housed in an 8-pin TDSON EP package, a non-lead-frame SMT type with no leads, measuring 5.15mm x 5.9mm x 1mm. It offers a low drain-source on-resistance of 2.8 mOhm at 10V and a maximum power dissipation of 2500mW, operating across a temperature range of -55°C to 150°C.
PackageTDSON EP
MountingSurface Mount
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Technical Specifications
Infineon BSC028N03LSC G technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SON |
| Package/Case | TDSON EP |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.15 |
| Package Width (mm) | 5.9 |
| Package Height (mm) | 1 |
| Seated Plane Height (mm) | 1 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 24A |
| Maximum Drain Source Resistance | 2.8@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|46@10VnC |
| Typical Gate Charge @ 10V | 46nC |
| Typical Input Capacitance @ Vds | 3700@15VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BSC028N03LSC G Datasheet
Download the complete datasheet for Infineon BSC028N03LSC G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.