N-channel enhancement mode Power MOSFET in a TDSON EP package, featuring a 30V drain-source voltage and 21A continuous drain current. This single element device utilizes OptiMOS process technology and offers a low drain-source on-resistance of 2.8 mOhm at 10V. The 8-pin surface-mount package measures 5.15mm x 5.9mm with a 1.27mm pin pitch, designed for efficient heat dissipation. Typical gate charge is 55nC at 10V, with input capacitance at 4300pF @ 15V.
PackageTDSON EP
MountingSurface Mount
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Technical Specifications
Infineon BSC028N03MSC G technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SON
Package/Case
TDSON EP
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5.15
Package Width (mm)
5.9
Package Height (mm)
1
Seated Plane Height (mm)
1
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
OptiMOS
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
21A
Maximum Drain Source Resistance
2.8@10VmOhm
Typical Gate Charge @ Vgs
[email protected]|55@10VnC
Typical Gate Charge @ 10V
55nC
Typical Input Capacitance @ Vds
4300@15VpF
Maximum Power Dissipation
2500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BSC028N03MSC G Datasheet
Download the complete datasheet for Infineon BSC028N03MSC G to view detailed technical specifications.
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