N-Channel Power MOSFET featuring 40V drain-source voltage and 23A continuous drain current. Offers a low 3mΩ Rds On resistance and 83W maximum power dissipation. Designed for surface mounting with a TDSON-8 package, this silicon Metal-oxide Semiconductor FET operates from -55°C to 150°C. Includes fast switching characteristics with a 5ns fall time and 16ns turn-on delay.
MountingSurface Mount
Power2.5W
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Technical Specifications
Infineon BSC030N04NSGATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 23A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.9nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 3mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 16ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC030N04NSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC030N04NSGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.