Infineon
BSC030P03NS3GXT
Power Field-Effect Transistor, 25.4A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
MountingSurface Mount
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Technical Specifications
Infineon BSC030P03NS3GXT technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 25.4A |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC030P03NS3GXT Datasheet
Download the complete datasheet for Infineon BSC030P03NS3GXT to view detailed technical specifications.
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