N-Channel Power MOSFET featuring 40V drain-source voltage and 98A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 3.2mΩ at 10Vgs. Designed for surface mount applications, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 52W. The component is RoHS compliant and packaged on tape and reel.
MountingSurface Mount
Power2.5W
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Technical Specifications
Infineon BSC032N04LSATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 98A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 3.2mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Rds On Max | 3.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC032N04LSATMA1 Datasheet
Download the complete datasheet for Infineon BSC032N04LSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.