N-channel Power MOSFET, OptiMOS technology, 30V drain-source voltage, 16A continuous drain current. Features 4.9 mOhm drain-source resistance at 10V gate-source voltage. Packaged in an 8-pin TDSON EP surface-mount package with no leads, measuring 5.15mm x 5.9mm x 1mm. Operates from -55°C to 150°C.
PackageTDSON EP
MountingSurface Mount
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Technical Specifications
Infineon BSC049N03MSC G technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SON
Package/Case
TDSON EP
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5.15
Package Width (mm)
5.9
Package Height (mm)
1
Seated Plane Height (mm)
1
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
OptiMOS
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
16A
Maximum Drain Source Resistance
4.9@10VmOhm
Typical Gate Charge @ Vgs
[email protected]|30@10VnC
Typical Gate Charge @ 10V
30nC
Typical Input Capacitance @ Vds
2300@15VpF
Maximum Power Dissipation
2500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BSC049N03MSC G Datasheet
Download the complete datasheet for Infineon BSC049N03MSC G to view detailed technical specifications.
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