Infineon
BSC050N03LSGXT
Power Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
MountingSurface Mount
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Technical Specifications
Infineon BSC050N03LSGXT technical specifications.
General
| Continuous Drain Current (ID) | 18A |
| Fall Time | 3.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 5.2ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC050N03LSGXT Datasheet
Download the complete datasheet for Infineon BSC050N03LSGXT to view detailed technical specifications.
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