N-Channel Power MOSFET featuring 25V drain-source voltage and 58A continuous drain current. This single-element silicon Metal-Oxide-Semiconductor FET offers a low 5mΩ Rds On resistance. Designed for surface mounting with tin contact plating, it operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 28W. The component is RoHS compliant and packaged on tape and reel.
MountingSurface Mount
Power2.5W
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Technical Specifications
Infineon BSC050NE2LSATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Voltage (Vdss) | 25V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 760pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Rds On Max | 5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC050NE2LSATMA1 Datasheet
Download the complete datasheet for Infineon BSC050NE2LSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.