N-Channel Power MOSFET, 30V Drain-to-Source Voltage (Vdss) and 17A Continuous Drain Current (ID). Features low 0.0072ohm On-Resistance, 2.4ns rise and fall times, and 2.4ns turn-on delay. Operates from -55°C to 150°C with a maximum power dissipation of 28W. Surface mountable in a TDSON-8 package with tin contact plating. RoHS compliant.
MountingSurface Mount
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Technical Specifications
Infineon BSC052N03LSATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 2.4ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC052N03LSATMA1 Datasheet
Download the complete datasheet for Infineon BSC052N03LSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.