
The BSC060P03NS3EGATMA1 is a 100A 30V N-Channel MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 83W and a threshold voltage of -2.5V. The device is surface mount and has a maximum drain to source voltage of -30V. It is compliant with RoHS and has a maximum input capacitance of 6.02nF.
Infineon BSC060P03NS3EGATMA1 technical specifications.
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | -30V |
| Gate to Source Voltage (Vgs) | 25V |
| Halogen Free | Halogen Free |
| Input Capacitance | 6.02nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Rds On Max | 6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | -2.5V |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSC060P03NS3EGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
