N-Channel Power MOSFET, 100V Vds, 90A Continuous Drain Current, 7mΩ Rds On. Features 2.7V Threshold Voltage, 4nF Input Capacitance, and 114W Max Power Dissipation. Designed for surface mount applications with Tin contact plating and TDSON-8 plastic packaging. Operates from -55°C to 150°C, RoHS compliant.
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Infineon BSC070N10NS3GATMA1 technical specifications.
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 114W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 114W |
| Rds On Max | 7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.7V |
| RoHS | Compliant |
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