Infineon
BSC076N06NS3GXT
Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
MountingSurface Mount
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Technical Specifications
Infineon BSC076N06NS3GXT technical specifications.
General
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
50A
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Radiation Hardening
No
RoHS Compliant
Yes
Turn-Off Delay Time
20ns
Turn-On Delay Time
15ns
Compliance
RoHS
Compliant
Datasheet
Infineon BSC076N06NS3GXT Datasheet
Download the complete datasheet for Infineon BSC076N06NS3GXT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.