N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET designed for small signal applications. Features a maximum drain current of 11A and a drain-source voltage of 25V. This 6-terminal device, with dual terminal position, operates within a temperature range of -55°C to 150°C.
Quick Jump:
Technical Specifications
Infineon BSC0910NDIATMA1 technical specifications.
General
| Number of Terminals | 6 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSC0910NDIATMA1 Datasheet
Download the complete datasheet for Infineon BSC0910NDIATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.