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Technical Specifications
Infineon BSC0911ND technical specifications.
General
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 25V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 18@Q 1|30@Q 2A |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 3.2@10V@Q 1|1.2@10V@Q 2mOhm |
| Typical Gate Charge @ Vgs | [email protected]@Q1|[email protected]@Q2nC |
| Typical Input Capacitance @ Vds | 1200@12V@Q 1|3800@12V@Q 2pF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BSC0911ND Datasheet
Download the complete datasheet for Infineon BSC0911ND to view detailed technical specifications.
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