N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET featuring a 25V Drain to Source Breakdown Voltage and 30A Continuous Drain Current. This surface mount device offers a low Drain to Source Resistance of 1.7mR and a maximum Rds On of 3.2mR. It operates within a temperature range of -55°C to 150°C and boasts a 4ns Fall Time and 25ns Turn-Off Delay Time. The component is RoHS compliant and packaged in cut tape.
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Infineon BSC0911NDATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 1.7mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.6nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 3.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC0911NDATMA1 Datasheet
Download the complete datasheet for Infineon BSC0911NDATMA1 to view detailed technical specifications.
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