
Surface mount N-channel JFET with 30V drain-source voltage and 31A continuous drain current. Features 5mΩ Rds(on) max, 1.025nF input capacitance, and 20V gate-source voltage. Operates from -55°C to 150°C with 1W max power dissipation. Tin contact plating, halogen-free, and RoHS compliant.
Infineon BSC0921NDIATMA1 technical specifications.
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.025nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSC0921NDIATMA1 to view detailed technical specifications.
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