Quick Jump:
Technical Specifications
Infineon BSC0923NDIATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Resistance | 3.8R |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.16nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| On-State Resistance | 5mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC0923NDIATMA1 Datasheet
Download the complete datasheet for Infineon BSC0923NDIATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
