N-channel enhancement mode power MOSFET featuring OptiMOS process technology. 30V drain-source voltage and 15A continuous drain current capability. Dual configuration with 8 pins in a TISON EP surface-mount package. Low drain-source on-resistance of 4.5mOhm at 10V gate-source voltage. Operates across a wide temperature range from -55°C to 150°C.
PackageTISON EP
MountingSurface Mount
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Technical Specifications
Infineon BSC0925ND technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SON |
| Package/Case | TISON EP |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.1(Max) |
| Package Width (mm) | 6.1(Max) |
| Package Height (mm) | 1.1(Max) |
| Seated Plane Height (mm) | 1.15(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 15A |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 4.5@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|13@10VnC |
| Typical Gate Charge @ 10V | 13nC |
| Typical Input Capacitance @ Vds | 870@15VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BSC0925ND Datasheet
Download the complete datasheet for Infineon BSC0925ND to view detailed technical specifications.
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