BSC094N06LS5ATMA1

N-Channel Power MOSFET featuring a low on-resistance of 0.0094 ohms and a drain-source voltage rating of 60V. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor is designed for high-current applications, with a continuous drain current capability of 11A. Packaged in a SUPERSO8 (TDSON-8) surface-mount format with 5 terminals, it offers dual terminal positioning and operates across a wide temperature range from -55°C to 150°C.