N-channel power MOSFET with 30V drain-source breakdown voltage and 44A continuous drain current. Features low 10mΩ drain-source resistance (Rds On Max) and 1.5nF input capacitance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 30W. This surface-mount device is packaged in TDSON-8 and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Infineon BSC100N03LSG technical specifications.
General
| Continuous Drain Current (ID) | 44A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 1.5nF |
| Length | 5.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 3ns |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC100N03LSG Datasheet
Download the complete datasheet for Infineon BSC100N03LSG to view detailed technical specifications.
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